IXTT68P20T - Trench Gate Series

Series: Trench Gate
Questions? Contact Littelfuse Support
Littelfuse Power Semi TO-268 3 1S2C image
Roll Over to Zoom
Disclaimer Notice

Littelfuse products are not designed for, and shall not be used for, any purpose (including, without limitation, automotive, military, aerospace, medical, life-saving, life-sustaining or nuclear facility applications, devices intended for surgical implant into the body, or any other application in which the failure or lack of desired operation of the product may result in personal injury, death, or property damage) other than those expressly set forth in applicable Littelfuse product documentation. Warranties granted by Littelfuse shall be deemed void for products used for any purpose not expressly set forth in applicable Littelfuse documentation. Littelfuse shall not be liable for any claims or damages arising out of products used in applications not expressly intended by Littelfuse as set forth in applicable Littelfuse documentation. The sale and use of Littelfuse products is subject to Littelfuse Terms and Conditions of Sale, unless otherwise agreed by Littelfuse. "Littelfuse" includes Littelfuse, Inc., and all of its affiliate entities.

Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry commonly involved when using an N-Channel MOSFET. This enables designers to reduce component count, thereby improving drive circuit simplicity and over-all component cost structure. Furthermore, it allows for the design of a complementary power output stage with a corresponding N-Channel MOSFET, for a power half bridge stage paired with a simple drive circuit.

Features:

  • Fast intrinsic diode
  • Low Qg and RDSon
  • Avalanche rated
  • Extended FBSOA
  • International standard packages

Advantages:

  • Low gate charge resulting in simple drive requirement
  • High power density
  • Fast switching

Applications:

  • High-side switching
  • Load switches
  • Low voltage applications
  • High-efficiency switching power supplies
  • Inverters and battery chargers
    Check Stock
    Property (Mouseover for details) Value
    Drain-Source Voltage (V) -200
    Maximum On-Resistance @ 25 ℃ (Ohm) 0.055
    Continuous Drain Current @ 25 ℃ (A) -68
    Gate Charge (nC) 380
    Input Capacitance, CISS (pF) 33400
    Thermal resistance [junction-case] (K/W) 0.22
    Configuration Single
    Package Type TO-268S
    Typical Reverse Recovery Time (ns) 245
    Power Dissipation (W) 568
    Sample Request No
    Check Stock Yes
    Partner ECAD Models IXTT68P20T

    To request product environmental information, please complete the Product Environmental Information Request Form.