IXFH15N100Q3 - Q3-Class Series

Series: Q3-Class
Questions? Contact Littelfuse Support
Littelfuse Power Semi TO-247 3 H 2Sq 1W2N 3L image
Roll Over to Zoom
Disclaimer Notice

Littelfuse products are not designed for, and shall not be used for, any purpose (including, without limitation, automotive, military, aerospace, medical, life-saving, life-sustaining or nuclear facility applications, devices intended for surgical implant into the body, or any other application in which the failure or lack of desired operation of the product may result in personal injury, death, or property damage) other than those expressly set forth in applicable Littelfuse product documentation. Warranties granted by Littelfuse shall be deemed void for products used for any purpose not expressly set forth in applicable Littelfuse documentation. Littelfuse shall not be liable for any claims or damages arising out of products used in applications not expressly intended by Littelfuse as set forth in applicable Littelfuse documentation. The sale and use of Littelfuse products is subject to Littelfuse Terms and Conditions of Sale, unless otherwise agreed by Littelfuse. "Littelfuse" includes Littelfuse, Inc., and all of its affiliate entities.

The Q3-Class series Power MOSFETs provide the end-user with a broad range of devices that demonstrate exceptional power switching performance, excellent thermal characteristics, enhanced device ruggedness, and high energy efficiency. Available with drain-to-source voltage ratings of 200V–1000V and drain current ratings of 10A–100A, the Q3-Class series features an optimized combination of low on-state resistance (Rdson) and gate charge (Qg), resulting in a substantial reduction in both the conduction and switching loss of the device.

Power switching capabilities and device ruggedness are further enhanced through the utilization of our proven HiPerFETTM process, yielding a device with a fast intrinsic rectifier which provides for low reverse recovery charge (Qrr) while enhancing the commutating dV/dt ratings (up to 50V/ns) of the device.

 

Features:

  • Low Rdson per silicon area
  • Low Qgand Qgd
  • Excellent dV/dt performance
  • High Speed Switching
  • Fast intrinsic Rectifier
  • Low Intrinsic Gate Resistance
  • High Avalanche Energy Capabilities
  • Excellent Thermal Performance

Applications:

  • Power Factor Correction
  • Battery chargers
  • Switched-mode and resonant-mode power supplies
  • Server and Telecom Power Systems
  • Arc Welding
  • Plasma Cutting
  • Induction Heating
  • Solar Generation Systems
  • Motor Controls

Advantages:

  • Easy to Mount
  • High Power Density
  • Space savings
Check Stock Order Samples
Property (Mouseover for details) Value
Drain-Source Voltage (V) 1000
Maximum On-Resistance @ 25 ℃ (Ohm) 1.05
Continuous Drain Current @ 25 ℃ (A) 15
Gate Charge (nC) 64
Input Capacitance, CISS (pF) 3250
Thermal resistance [junction-case] (K/W) 0.18
Configuration Single
Package Type TO-247
Power Dissipation (W) 690
Maximum Reverse Recovery (ns) 250
Sample Request Yes
Check Stock Yes
Partner ECAD Models IXFH15N100Q3

To request product environmental information, please complete the Product Environmental Information Request Form.