Link has been copied to clipboardSeries: Q3 Class
200V - 1100V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs)
The Q3-Class series Power MOSFETs provide the end-user with a broad range of devices that demonstrate exceptional power switching performance, excellent thermal characteristics, enhanced device ruggedness, and high energy efficiency. Available with drain-to-source voltage ratings of 200V–1000V and drain current ratings of 10A–100A, the Q3-Class series features an optimized combination of low on-state resistance (Rdson) and gate charge (Qg), resulting in a substantial reduction in both the conduction and switching loss of the device.
Power switching capabilities and device ruggedness are further enhanced through the utilization of our proven HiPerFETTM process, yielding a device with a fast intrinsic rectifier which provides for low reverse recovery charge (Qrr) while enhancing the commutating dV/dt ratings (up to 50V/ns) of the device.
Advantages:
- Easy to Mount
- High Power Density
- Space savings
- Low Rdson per silicon area
- Low Qgand Qgd
- Excellent dV/dt performance
- High Speed Switching
- Fast intrinsic Rectifier
- Low Intrinsic Gate Resistance
- High Avalanche Energy Capabilities
- Excellent Thermal Performance
Q3 Class Parts
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Filters
Q3 Class Applications
- Power Factor Correction
- Battery chargers
- Switched-mode and resonant-mode power supplies
- Server and Telecom Power Systems
- Arc Welding
- Plasma Cutting
- Induction Heating
- Solar Generation Systems
- Motor Controls
