MOS Gated Thyristor Series - MOS Gated Thyristor

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  • Designed for high-power pulse and capacitive discharge applications 
  • Switched on by a voltage applied at the gate terminal (MOS structure) 
  • Capable of carrying current up to 32kA for a period of 1 microsecond 
  • High power densities 
  • Low gate drive requirements
  • Available in proprietary packages: Product Line Introduction (1500V MOS-Gated Thyristors) 
    • surface mountable SMPD and Mini-SMPD
    • high-voltage versions of the international standard TO-247: TO-247HV and TO-247PLUS-HV 

Access specifications, certifications, check availability and order parts below

Catalog #StatusVDM(V)ITSM 1μs TC = 25°C (kA)ITSM 10μs TC = 25°C(kA)VT (V)rT (mOhm)Qg(on) (nC)tri TC = 25°C (ns)VGK(th) (V)Co-pack DiodePackage TypePart DatasheetSamplesCompare
 
IXHH40N150HVActive15007.63.57.51.2991005NoTO-247HVPartOrder
IXHX40N150V1HVActive15007.63.57.51.2991005YesTO-247 PLUS-HVPart
MMIX1H60N150V1Active15003211.87.51.21801005YesSMPDPartOrder
MMJX1H40N150Not for New Designs150015.56.461.2991005NoSSMPDPart
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