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IXFR24N100Q3

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IXFR24N100Q3

DiscMSFT NChHiPerFET-Q3 Class ISOPLUS247 | Series: Q3 Class
info

The Q3-Class series Power MOSFETs provide the end-user with a broad range of devices that demonstrate exceptional power switching performance, excellent thermal characteristics, enhanced device ruggedness, and high energy efficiency. Available with drain-to-source voltage ratings of 200V–1000V and drain current ratings of 10A–100A, the Q3-Class series features an optimized combination of low on-state resistance (Rdson) and gate charge (Qg), resulting in a substantial reduction in both the conduction and switching loss of the device.

Power switching capabilities and device ruggedness are further enhanced through the utilization of our proven HiPerFETTM process, yielding a device with a fast intrinsic rectifier which provides for low reverse recovery charge (Qrr) while enhancing the commutating dV/dt ratings (up to 50V/ns) of the device.

Advantages:

  • Easy to Mount
  • High Power Density
  • Space savings
PropertyValue
VDSS (V)
1000
RDS(ON),max @ 25 °C (Ω)
0.49
ID, cont @ 25 °C (A)
18
Gate Charge (nC)
140
RthJC (K/W)
0.25
Configuration
Single
Package Type
TO-247I
CISS (pF)
7200
PD (W)
500
trr,max (ns)
300
  • Low Rdson per silicon area
  • Low Qg and Qgd
  • Excellent dV/dt performance
  • High Speed Switching
  • Fast intrinsic Rectifier
  • Low Intrinsic Gate Resistance
  • High Avalanche Energy Capabilities
  • Excellent Thermal Performance

IXFR24N100Q3 Applications

Highlights Section

  • Power Factor Correction
  • Battery chargers
  • Switched-mode and resonant-mode power supplies
  • Server and Telecom Power Systems
  • Arc Welding
  • Plasma Cutting
  • Induction Heating
  • Solar Generation Systems
  • Motor Controls

IXFR24N100Q3 Resources

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Part NumberPart DescriptionRoHSPb-FreeRoHS (2015/863/EU) CertificateREACH (SVHC's) DeclarationREACH (SVHC's)Halogen FreeIPC-Material Declaration
IXFR24N100Q3DiscMSFT NChHiPerFET-Q3 Class ISOPLUS247

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