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Series: LGB8206AxI

Ignition IGBT, N-Channel, 20 A, 350 V

Product Status| Activei

This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.

End Products:

Automotive

Gate-Emitter ESD Protection
Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load
Integrated ESD Diode Protection
Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices
Low Saturation Voltage
High Pulsed Current Capability
Optional Gate Resistor (RG)and Gate-Emitter Resistor (RGE)

LGB8206AxI Parts

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Showing 1 to 3 of 3 Total Results

Part Number	Actions	TYP BV_CES@I_C (V)	I_Cmax (A)	V_CE(sat) (V)	E_AS (mJ)	P_DMAX (W)
Series: LGB8206AxI - Ignition IGBT, N-Channel, 20 A, 350 V Series: LGB8206AxI Ignition IGBT, N-Channel, 20 A, 350 V	Request Sample View More	350	20	1.3	250	150
Series: LGB8206AxI - Ignition IGBT, N-Channel, 20 A, 350 V Series: LGB8206AxI Ignition IGBT, N-Channel, 20 A, 350 V	Datasheet Request Sample View More	350	20	1.3	250	150
Series: LGB8206AxI - Ignition IGBT, N-Channel, 20 A, 350 V Series: LGB8206AxI Ignition IGBT, N-Channel, 20 A, 350 V	Request Sample View More	350	20	1.3	250	150