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Can be used to reduce the component count in rectifier bridges, or for increased current density
The parallel SiC Schottky diodes series can be used to reduce the component count in rectifier bridges, or for increased current density. Made of SiC material, these diodes are recommended for fast switching applications, and for systems with a need to reduce the power losses and increase the power density.
- Parallel diodes configuration
- SiC Schottky diodes
- 175 °C maximum operating junction temperature
- Zero reverse recovey
- Dramatically reduced switching losses as compared to silicon Schottky diodes, zero reverse recovery
- Fast and temperature independant switching
- Space saving, high current density
- Positive temperature coefficient for ease of paralleling
- Robust thanks to excellent surge capability
Parallel Diodes Parts
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| Not for New Designs | 1200 | 300 | 0.43 | 175 | SOT-227B (minibloc) | Dual (parallel diodes) | Industrial | E72873 | 3000 | |||||
| Not for New Designs | 1200 | 100 | 0.9 | 175 | SOT-227B (minibloc) | Dual (parallel diodes) | Industrial | E72873 | 3000 | |||||
| Not for New Designs | 1200 | 200 | 0.6 | 175 | SOT-227B (minibloc) | Dual (parallel diodes) | Industrial | E72873 | 3000 |
Parallel Diodes Applications
- High speed rectification
- xEV chargers, battery chargers
- Energy generation, photovoltaic inverters
- Industrial switch mode power supplies, UPS