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LGB8245TI
D2PAK, IGBT4 | Series: LGB8245TI
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or whatever high voltage and high current switching is required.
End Products:
- Automotive
| Property | Value |
|---|---|
TYP BVCES@IC (V) | 450 |
ICmax (A) | 20 |
VCE(sat) (V) | 1.1 |
EAS (mJ) | 158 |
PDMAX (W) | 150 |
- Ideal for Coil-on-Plug and Driver-on-Coil Applications
- Gate-Emitter ESD Protection
- Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load.
- Integrated ESD Diode Protection
- Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices
- Low Saturation Voltage
- High Pulsed Current Capability
- Optional Gate Resistor (RG) and Gate-Emitter Resistor (RGE)
LGB8245TI Applications
- Ignition Systems
- Direct Fuel Injection
LGB8245TI Resources
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| Part Number | Part Description | RoHS | Pb-Free | RoHS (2015/863/EU) Certificate | REACH (SVHC's) Declaration | REACH (SVHC's) | Halogen Free | IPC-Material Declaration | |
|---|---|---|---|---|---|---|---|---|---|
| LGB8245TI | D2PAK, IGBT4 |  4/6/2021 |  4/6/2021 |  CoC_RoHS9_LGB8245TI | REACH_SVHC Declaration (Contain)_LGB8245TI.pdf | Contains | Yes4/6/2021 | View More |
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