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LGB8207TH
D2PAK, IGBT3 | Series: LGB8207TH
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.
End Products:
- Automotive
| Property | Value |
|---|---|
TYP BVCES@IC (V) | 365 |
ICmax (A) | 20 |
VCE(sat) (V) | 1.5 |
EAS (mJ) | 500 |
PDMAX (W) | 165 |
- Ideal for Coil-on-Plug and Driver-on-Coil Applications
- Gate-Emitter ESD Protection
- Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load
- Integrated ESD Diode Protection
- Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices
- Low Saturation Voltage
- High Pulsed Current Capability
- Gate Resistor (RG) = 70 Ω
LGB8207TH Applications
- Ignition Systems
LGB8207TH Resources
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| Part Number | Part Description | RoHS | Pb-Free | RoHS (2015/863/EU) Certificate | REACH (SVHC's) Declaration | REACH (SVHC's) | Halogen Free | IPC-Material Declaration | |
|---|---|---|---|---|---|---|---|---|---|
| LGB8207TH | D2PAK, IGBT3 | View More |
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