IXTT76P10THV - Trench Gate Series

Series: Trench Gate
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Littelfuse Power Semi TO-268HV 2 2C image
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Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry commonly involved when using an N-Channel MOSFET. This enables designers to reduce component count, thereby improving drive circuit simplicity and over-all component cost structure. Furthermore, it allows for the design of a complementary power output stage with a corresponding N-Channel MOSFET, for a power half bridge stage paired with a simple drive circuit.

Features:

  • Fast intrinsic diode
  • Low Qg and RDSon
  • Avalanche rated
  • Extended FBSOA
  • International standard packages

Advantages:

  • Low gate charge resulting in simple drive requirement
  • High power density
  • Fast switching

Applications:

  • High-side switching
  • Load switches
  • Low voltage applications
  • High-efficiency switching power supplies
  • Inverters and battery chargers

    Property (Mouseover for details) Value
    Drain-Source Voltage (V) -100
    Maximum On-Resistance @ 25 ℃ (Ohm) 0.025
    Continuous Drain Current @ 25 ℃ (A) -76
    Gate Charge (nC) 197
    Input Capacitance, CISS (pF) 13700
    Thermal resistance [junction-case] (K/W) 0.42
    Configuration Single
    Package Type TO-268HV
    Typical Reverse Recovery Time (ns) 70
    Power Dissipation (W) 298
    Sample Request No
    Partner ECAD Models IXTT76P10THV

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