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IXTT76P10THV
| Series: Trench Gate
Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry commonly involved when using an N-Channel MOSFET. This enables designers to reduce component count, thereby improving drive circuit simplicity and over-all component cost structure. Furthermore, it allows for the design of a complementary power output stage with a corresponding N-Channel MOSFET, for a power half bridge stage paired with a simple drive circuit.
Advantages:
- Low gate charge resulting in simple drive requirement
- High power density
- Fast switching
| Property | Value |
|---|---|
VDSS (V) | -100 |
RDS(ON),max @ 25 °C (Ω) | 0.025 |
ID, cont @ 25 °C (A) | -76 |
Gate Charge (nC) | 197 |
RthJC (K/W) | 0.42 |
Configuration | Single |
Package Type | TO-268HV |
CISS (pF) | 13700 |
trr,typ (ns) | 70 |
PD (W) | 298 |
- Fast intrinsic diode
- Low Qg and RDSon
- Avalanche rated
- Extended FBSOA
- International standard packages
IXTT76P10THV Applications
- High-side switching
- Load switches
- Low voltage applications
- High-efficiency switching power supplies
- Inverters and battery chargers
IXTT76P10THV Resources
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| Part Number | Part Description | RoHS | Pb-Free | RoHS (2015/863/EU) Certificate | REACH (SVHC's) Declaration | REACH (SVHC's) | Halogen Free | IPC-Material Declaration | |
|---|---|---|---|---|---|---|---|---|---|
| IXTT76P10THV | View More |
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