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IXTA8N65X2
DiscMSFT NChUltraJnctn X2Class TO-263D2 | Series: X2 Class
Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness.
In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI).
Advantages:
- Higher efficiency
- High power density
- Easy to mount
- Space savings
| Property | Value |
|---|---|
VDSS (V) | 650 |
RDS(ON),max @ 25 °C (Ω) | 0.5 |
ID, cont @ 25 °C (A) | 8 |
Gate Charge (nC) | 12 |
RthJC (K/W) | 0.83 |
Configuration | Single |
Package Type | TO-263 |
CISS (pF) | 800 |
trr,typ (ns) | 200 |
PD (W) | 150 |
- Ultra low on-resistance RDS(ON) and gate charge Qg
- Fast body diode
- dv/dt ruggedness
- Avalanche rated
- Low package inductance
- International standard packages
IXTA8N65X2 Applications
- Industrial switched-mode and resonantmode power supplies
- Electric vehicle battery chargers
- Ac and dc Motor Drives
- Dc-dc converters
- Renewable-energy inverters
- Power Factor Correction (PFC) circuits
- Robotics and servo control
IXTA8N65X2 Resources
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| Part Number | Part Description | RoHS | Pb-Free | RoHS (2015/863/EU) Certificate | REACH (SVHC's) Declaration | REACH (SVHC's) | Halogen Free | IPC-Material Declaration | |
|---|---|---|---|---|---|---|---|---|---|
| IXTA8N65X2 | DiscMSFT NChUltraJnctn X2Class TO-263D2 | View More |
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