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IXFQ24N60X
DiscMSFT NCh UltrJnctn XClass TO-3P (3) | Series: X Class
Ultra-Junction X-Class Power MOSFETs with fast body diodes are rugged devices that display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI).
Advantages:
- Higher efficiency
- High power density
- Easy to mount
- Space savings
| Property | Value |
|---|---|
VDSS (V) | 600 |
RDS(ON),max @ 25 °C (Ω) | 0.175 |
ID, cont @ 25 °C (A) | 24 |
Gate Charge (nC) | 47 |
RthJC (K/W) | 0.31 |
Configuration | Single |
Package Type | TO-3P |
CISS (pF) | 1910 |
trr,typ (ns) | 140 |
PD (W) | 400 |
- Ultra low on-resistance RDS(ON) and gate charge Qg
- Fast body diode
- dv/dt ruggedness
- Avalanche rated
- Low package inductance
- International standard packages
IXFQ24N60X Applications
- Industrial switched-mode and resonant-mode power supplies
- Electric vehicle battery chargers
- Ac and dc Motor Drives
- Dc-dc converters
- Renewable-energy inverters
- Power Factor Correction (PFC) circuits
- Robotics and servo control
IXFQ24N60X Resources
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| Part Number | Part Description | RoHS | Pb-Free | RoHS (2015/863/EU) Certificate | REACH (SVHC's) Declaration | REACH (SVHC's) | Halogen Free | IPC-Material Declaration | |
|---|---|---|---|---|---|---|---|---|---|
| IXFQ24N60X | DiscMSFT NCh UltrJnctn XClass TO-3P (3) | View More |
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