background-waves

IXFP20N85X

Product Status| Activei

IXFP20N85X

DiscMSFT NCh UltrJnct XClass TO-220AB/FP | Series: X Class
info

Ultra-Junction X-Class Power MOSFETs with fast body diodes are rugged devices that display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI).

Advantages:

  • Higher efficiency
  • High power density
  • Easy to mount
  • Space savings
PropertyValue
VDSS (V)
850
RDS(ON),max @ 25 °C (Ω)
0.33
ID, cont @ 25 °C (A)
20
Gate Charge (nC)
63
RthJC (K/W)
0.23
Configuration
Single
Package Type
TO-220
CISS (pF)
1660
trr,typ (ns)
190
PD (W)
540
  • Ultra low on-resistance RDS(ON) and gate charge Qg
  • Fast body diode
  • dv/dt ruggedness
  • Avalanche rated
  • Low package inductance
  • International standard packages

IXFP20N85X Applications

Highlights Section

  • Industrial switched-mode and resonant-mode power supplies
  • Electric vehicle battery chargers
  • Ac and dc Motor Drives
  • Dc-dc converters
  • Renewable-energy inverters
  • Power Factor Correction (PFC) circuits
  • Robotics and servo control

IXFP20N85X Resources

Showing 1 to 1 of 1 Total Results
Share
Part NumberPart DescriptionRoHSPb-FreeRoHS (2015/863/EU) CertificateREACH (SVHC's) DeclarationREACH (SVHC's)Halogen FreeIPC-Material Declaration
IXFP20N85XDiscMSFT NCh UltrJnct XClass TO-220AB/FP

If the product environmental information that you are looking for does not appear in this tab, please complete the Product Environmental Information Request Form.