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IXFN360N10T
DiscMSFT NChTrenchGateGen1 SOT-227B(mini | Series: Gen1
Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments.
Advantages:
- Easy to Mount
- Space Savings
- High power density
| Property | Value |
|---|---|
VDSS (V) | 100 |
RDS(ON),max @ 25 °C (Ω) | 0.0026 |
ID, cont @ 25 °C (A) | 360 |
Gate Charge (nC) | 525 |
RthJC (K/W) | 0.18 |
Configuration | Single |
Package Type | SOT-227 |
CISS (pF) | 33000 |
PD (W) | 830 |
- International Standard Packages
- Low RDS(ON)
- Avalanche rated
- High Current Handling Capability
- Fast Intrinsic Rectifier
IXFN360N10T Applications
- Switch-Mode and Resonant-Mode Power Supplies
- Dc-dc converters
- Battery Chargers
- Uninterrupted Power Supplies
- AC motor drives
- Dc choppers
- High Speed Power Switching Applications
IXFN360N10T Resources
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| Part Number | Part Description | RoHS | Pb-Free | RoHS (2015/863/EU) Certificate | REACH (SVHC's) Declaration | REACH (SVHC's) | Halogen Free | IPC-Material Declaration | |
|---|---|---|---|---|---|---|---|---|---|
| IXFN360N10T | DiscMSFT NChTrenchGateGen1 SOT-227B(mini | View More |
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