Link has been copied to clipboardN-Channel Trench Gate
Trench gate N-channel MOSFETs boast ultra-low on-state resistance and excellent temperature tolerance. These characteristics make them ideal solid state switches in low-voltage, high current systems and harsh environments. Suitably, principal applications for these metal-oxide–semiconductor field effect transistors include light EVs, unmanned aerial vehicles, and onboard battery chargers. Most of the trench gate N-channel MOSFETs made by Littelfuse incorporate HiPerFETTM technology. This addition boosts switching speeds while reducing or eliminating the need for parallel switches.
- Available with drain-to-source voltage ratings of 40 VDSS to 300 VDSS
- Extremely low on-state resistance ratings (e.g., 0.85 mΩ, 1.3 mΩ, 3.1 mΩ)
- Available with a wide range of typical drain currents (ID25) from 32 A and 660 A
- Operate at temperatures from –40 ℃ to 175 ℃
- Avalanche rated
- High power densities
- Low on-state resistance minimizes power losses
- Optimized for synchronous rectification in switched mode power conversion applications
- International standard packages
N-Channel Trench Gate Parts
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