Link has been copied to clipboardLow-Power Depletion Mode
N-channel depletion mode field effect transistors (FETs) offer highly reliable solid state relay gate solutions for automotive, industrial, and telecommunications systems. The high-voltage N-channel MOSFETs take advantage of vertical double-diffused metal-oxide–semiconductor (DMOS) architecture to deliver a small footprint. This saves PCB space without sacrificing performance. Typical applications for the devices include ignition modules, power converters, power supplies, and LED driver integrated circuits.
- Normally closed when no power applied
- 350 V drain-to-source voltage
- Low cutoff voltage (VGS(off))
- High input impedance
- Low input and output leakage
- Specifically designed for high-voltage applications
- Ability to perform well in cold environments make devices good choice for automotive ignition modules
- Small size delivers PCB space- and cost-savings
- FET structure prevents thermal runaway and thermally induced secondary breakdown
Low-Power Depletion Mode Parts
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Showing 1 to 12 of 13 Total Results
| 60 | 1 | -1.4 | -3.1 | 600 | SOT-89 | |||
| 250 | 4 | -1.6 | -3.9 | 360 | SOT-89 | |||
| 350 | 14 | -2 | -3.6 | 130 | SOT-89, SOT-223 | |||
| 250 | 10 | -1.6 | -3.9 | 220 | SOT-89 | |||
| 350 | 14 | -1.6 | -3.9 | 240 | SOT-89 | |||
| 350 | 22 | -1.6 | -3.9 | 130 | SOT-89 | |||
| 350 | 35 | -1.6 | -3.9 | 140 | SOT-89 | |||
| 250 | 2.5 | -1.4 | -3.1 | 400 | SOT-223 | |||
| 400 | 6 | -1.4 | -3.1 | 300 | SOT-89, SOT-223 | |||
| 600 | 44 | -1.4 | -3.1 | 100 | SOT-223 | |||
| 800 | 45 | -1.4 | -3.1 | 100 | SOT-223 | |||
| 800 | 45 | -1.4 | -3.1 | 100 | SOT-223-2L |
