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IXFH22N60X2A
| Series: Ultra Junction X2 Class
With on-resistance as low as 17 milliohms and current ratings ranging from 22A to 150A, these IXFH22N60X2A devices are optimized for soft-switching resonant-mode power conversion applications.
The intrinsic fast body diodes HiPerFETs of the MOSFETs display very soft recovery characteristics, minimizing electromagnetic interference (EMI), especially in half or full-bridge switching topologies. With low reverse recovery charge and time, the body diodes can be utilized to make sure that all the energies are removed during high-speed switching to avoid device failure and achieve high efficiency.
| Property | Value |
|---|---|
VDSS (V) | 600 |
RDS(ON),max @ 25 °C (Ω) | 0.145 |
ID, cont @ 25 °C (A) | 22 |
Gate Charge (nC) | 37 |
RthJC (K/W) | 0.32 |
Configuration | Single |
Package Type | TO-247 |
CISS (pF) | 2190 |
trr,typ (ns) | 145 |
PD (W) | 390 |
- International Standard Packages
- Low RDS(ON) and QG
- Avalanche Rated
- Low Package Inductance
- High Power Density
- Easy to Mount
- Space Savings
IXFH22N60X2A Applications
- Switch-Mode and Resonant-Mode Power Supplies
- Dc-dc converters
- PFC Circuits
- Ac and dc Motor Drives
- Robotics and Servo Controls
IXFH22N60X2A Resources
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| Part Number | Part Description | RoHS | Pb-Free | RoHS (2015/863/EU) Certificate | REACH (SVHC's) Declaration | REACH (SVHC's) | Halogen Free | IPC-Material Declaration | |
|---|---|---|---|---|---|---|---|---|---|
| IXFH22N60X2A | View More |
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