background-waves

IXYP30N120A4

Product Status| Activei

IXYP30N120A4

IGBT DISCRETE TO-220 | Series: Trench
info

Utilizing XPT™ thin-wafer technology and 4th generation (GenX4™) Trench IGBT process, these up to 1200V devices helps to reduced gate driver requirements and conduction losses. It features reduced thermal resistance, low losses, high current densities and low gate charge requirement. A positive collector-to-emitter voltage temperature coefficient enables designers to use multiple devices in parallel.

Advantages:

  • Ideal for high power density and high inrush currents, low loss applications
  • Hard-switching capable
  • Easy paralleling of devices
  • Reduced gate driver requirements
  • Ease of replacement and availability of isolation package
PropertyValue
VCES (V)
1200
IC @ 25 °C (A)
106
VCE(sat) (V)
1.9
tfi (ns)
147
Configuration
Single
Package Type
TO-220
Status
Active
RthJC [IGBT] (K/W)
0.3
Eoff @ 125 °C (mJ)
5.6
IC @ 110 °C (A)
30
  • Low on-state voltages Vcesat
  • Positive thermal coefficient of Vcesat
  • International standard packages

IXYP30N120A4 Applications

Highlights Section

  • Battery chargers
  • Lamp ballasts
  • Power inverters
  • Uninterruptible power supplies (UPS)
  • Welding machines

IXYP30N120A4 Resources

Showing 1 to 1 of 1 Total Results
Share
Part NumberPart DescriptionRoHSPb-FreeRoHS (2015/863/EU) CertificateREACH (SVHC's) DeclarationREACH (SVHC's)Halogen FreeIPC-Material Declaration
IXYP30N120A4IGBT DISCRETE TO-220

If the product environmental information that you are looking for does not appear in this tab, please complete the Product Environmental Information Request Form.