IXYA60N65A5 - Trench Series

Series: Trench
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Littelfuse Power Semi TO-263HV 2 2C image
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Littelfuse products are not designed for, and shall not be used for, any purpose (including, without limitation, automotive, military, aerospace, medical, life-saving, life-sustaining or nuclear facility applications, devices intended for surgical implant into the body, or any other application in which the failure or lack of desired operation of the product may result in personal injury, death, or property damage) other than those expressly set forth in applicable Littelfuse product documentation. Warranties granted by Littelfuse shall be deemed void for products used for any purpose not expressly set forth in applicable Littelfuse documentation. Littelfuse shall not be liable for any claims or damages arising out of products used in applications not expressly intended by Littelfuse as set forth in applicable Littelfuse documentation. The sale and use of Littelfuse products is subject to Littelfuse Terms and Conditions of Sale, unless otherwise agreed by Littelfuse. "Littelfuse" includes Littelfuse, Inc., and all of its affiliate entities.

Developed using our proprietary XPT™ thin-wafer technology and state-of-the-art 5th generation (GenX5™) Trench IGBT process, these devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities.

These IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) and with 650V breakdown voltage, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coefficient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges which help reduce gate drive requirements and switching losses.

Features:

  • Low Vcesat, low Eon/Eoff,
  • Optimized for low switching frequencies
  • High surge current capability
  • Square Reverse Bias Safe Operating Areas （RBSOA)
  • Positive thermal coefficient of Vcesat

Applications:

  • Battery Chargers
  • Lamp Ballast
  • Motor Drives
  • Power Inverters
  • Welding Machines

Advantages:

  • Hard-switching capabilities
  • High power densities
  • Low gate drive requirements
  • Ease of replacement and availability of isolation package

Property (Mouseover for details) Value
Status Active
VCES - Collector-Emitter Voltage (V) 650
Collector Current @ 25 ℃ (A) 134
VCE(sat) - Collector-Emitter Saturation Voltage (V) 1.35
TJ Max (°C) 175
Fall Time [Inductive Load] (ns) 240
Package Type TO-263
Turn-off Energy @ 150 ℃ (mJ) 2.5
Collector Current @ 110 ℃ (A) 60
RthJC - Junction-to-Case Thermal Resistance (Per IGBT) (K/W) 0.38
Ptot - Power Dissipation Per IGBT (W) 395

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