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IXYT80N90C3
Disc IGBT XPT-GenX3 TO-268AA | Series: Planar
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements.
Their low gate charges also help reduce gate drive requirements and switching losses. These devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage – a necessary ruggedness in snubberless hard-switching applications.
Advantages:
- Hard-switching capability
- High power density
- Low gate drive requirements
| Property | Value |
|---|---|
VCES (V) | 900 |
IC @ 25 °C (A) | 165 |
VCE(sat) (V) | 2.7 |
tfi (ns) | 86 |
Configuration | Single |
Package Type | TO-268S |
Status | Active |
RthJC [IGBT] (K/W) | 0.18 |
Eoff @ 150 °C (mJ) | 2.5 |
IC @ 110 °C (A) | 80 |
- Optimized for mid- and high-switching frequencies
- Square RBSOA
- Short circuit capability
- Ultra-fast anti-parallel diodes
- International standard package
IXYT80N90C3 Applications
- Battery chargers
- E-Bikes
- Lamp ballasts
- Power inverters
- Power Factor Correction (PFC) circuits
- Switched-mode power supplies
- Uninterruptible Power Supplies (UPS)
- Welding machines
IXYT80N90C3 Resources
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| Part Number | Part Description | RoHS | Pb-Free | RoHS (2015/863/EU) Certificate | REACH (SVHC's) Declaration | REACH (SVHC's) | Halogen Free | IPC-Material Declaration | |
|---|---|---|---|---|---|---|---|---|---|
| IXYT80N90C3 | Disc IGBT XPT-GenX3 TO-268AA | View More |
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