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XPT

IGBTs
The highest-performing solid state switches exhibit low thermal resistance, low tail current, low energy loss, and high-speed switching capabilities. Littelfuse’s eXtreme light punch through (XPT) IGBTs deliver on all counts. Configured as either planar or trench IGBTs, these high-voltage insulated-gate bipolar transistors can be used in parallel. Doing this yields cost savings and simplifies gate drive circuit design. Installing fast-recovery diodes with our XPT IGBTs ensures smoother switching and significantly reduces electromagnetic interference.
  • Available with continuous voltage (VCES) ratings from 600 V to 4.5 kV
  • Available with typical current ratings from 9 A to 94 A
  • Saturation voltages generally below 4 V
  • Low case-to-junction resistance (e.g., 92 mK/W, 4.4 K/W)
  • Positive temperature coefficient for on-state voltage facilitates paralleling
  • Low gate current requirements
  • Available packaged with fast recovery diodes
  • International standard packages

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