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Power Semiconductor and IC Selection Guide
See our comprehensive portfolio of power semiconductor & integrated circuit technologies in industry standard & innovative packages.
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Punch Through (PT) IGBTs perform fast switching with low conduction losses when handling signals in the range of 100 kHz to 200 kHz. All PT insulated-gate bipolar transistors made by Littelfuse represent cost-effective alternatives to metal-oxide–semiconductor field effect transistors (MOSFETs) in lower-voltage circuits. Our GenX3TM IGBTs are optimized for use in high-power conversion applications. Consult our Power Semiconductor Product Catalog to find your best solution.
- Rated at 600 V dc or 1.2 kV dc
- Low voltage saturation points of 2.5 V dc to 3.4 V dc
- Handle currents between 42 A and 120 A
- Avalanche rated
- Square reverse bias safety operating area (RBSOA)
- High power density
- Incorporation of metal oxide semiconductor (MOS) gate simplifies turn-on
- Available in three configurations, two of which have a gate, an emitter, and a collector while the other has just a gate and an emitter
- Three configurations allow designers to choose their best option in terms of switching frequency, efficiency, and cost
- Available in JEDEC TO standard packages
- Suitable for surface mounting or mounting with a single screw
- Available with an optional antiparallel fast-recovery diode
PT Parts
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