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BiMOSFET

Littelfuse Discrete IGBTs High Voltage Image
The BiMOSFET integrates a metal-oxide–silicon field-effect transistor (MOSFET) and an insulated gate bipolar transistor (IGBT) into a compact solid-state switch similar to an RC IGBT, featuring a monolithically integrated diode. The BiMOSFET family offers a wide range of blocking voltages (1700V to 3600V), can handle collector currents up to 75A at 110°C, and is available in various high-voltage (HV) packages, both isolated and non-isolated. Additionally, this series includes a multi-chip H-Bridge option in an SMPD package.
  • High blocking voltage up to 3600V
  • Low VCE(sat)
  • Low gate charge QG
  • High pulsed collector current
  • Monolithically integrated diode
  • Positive temperature co-efficient
  • High power densities
  • Low conduction losses
  • Low gate driver requirements
  • Reverse conduction
  • Ease of paralleling

BiMOSFET Parts

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BiMOSFET Applications

Highlights Section

  • Capacitor discharge circuits
  • Induction heating
  • Radar pulse modulators
  • Resonant-mode power supplies
  • Laser and X-ray generators
  • High voltage pulsed power circuits
  • High voltage test equipment