Link has been copied to clipboardFast Recovery
Fast recovery diodes work by themselves and with thyristors as solid state switches and snubber devices. The diodes’ low reverse recovery times facilitate high speed switching. Fast recovery also protects insulated-gate bipolar transistors (IGBTs) and integrate gate-commutated thyristors (IGCTs) against commutation failures. Through our IXYS subsidiary, Littelfuse offers several kinds of fast recovery diodes with a wide variety of performance characteristics. Identify your best solution in our Power Semiconductor Product Catalog.
- Available with typical reverse recovery times as low as 0.3 µs
- Available with maximum repetitive recovery voltage (Vrrm) from 200 V to 6 kV
- Available with low maximum forward voltage drop ratings of 900 mV to 4.33 V
- Available with a broad range of average forward current (Ifav) current ratings of 5 A to 2.423 kA
- Available in single, dual, and common cathode configurations
- Low current leakage
- Low terminal-to-junction thermal resistance
- International standard packages for all but select HiPerDYN diodes designed for superior voltage isolation
Fast Recovery Parts
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