Link has been copied to clipboardH-Bridge
H-Bridge IGBT modules serve as solid state switches in relatively low-voltage circuits. Constructed with XPT (eXtreme punch through) insulated-gate bipolar transistor architectures, the modules include MOSFETs, thyristors, and diodes. Littelfuse subsidiary IXYS makes several versions of H-Bridge IGBTs, with each being designed for continuous use, high reliability, and long life.
- Collector–emitter voltage rating of 1.2 kV
- Low typical saturation voltages of 1.7 V or 1.8 V
- Short circuit rated for 10 µs
- Square reverse bias safety operating area (RBSOA) three times the collector’s rated current
- Positive temperature coefficient of on-state voltage facilitates paralleling
- Available with SONICTM fast recovery diodes or soft recovery diodes
- Low operating forward voltages
- Low gate charge requirements
- Produce minimal electromagnetic interference