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LSIC1MO170E0750

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LSIC1MO170E0750

SiC MOSFET 1700V 750mO TO-247-3L | Series: SIC MOSFETs
info

Littelfuse 1700V, 750mOhm Silicon Carbide (SiC) MOSFET bring SiC fast switching and energy saving performance to the 1700V voltage range, focusing on auxiliary power supplies. The MOSFET is available in 3 different discrete packages, with the recent addition of a TO-268-2L option with extra clearance between source and gate pin. The separated source pin of the TO-268-7L option reduce significantly the parasitic source inductance path to the driver, which helps improve the efficiency in high power applications. The maximum operating junction temperature is 175 ºC.

PropertyValue
VDSS (V)
1700
RDS(ON),max @ 25 °C (Ω)
750
ID, cont @ 25 °C (A)
4.4
RthJC (K/W)
2.5
TJ Max (°C)
175
  • On-state resistance RDS(ON) 750mΩ (typ)
  • Gate resistance 29Ω typ.
  • Continuous drain current ~4.4A at 100°C
  • Reverse diode current 9A cont. at 25°C
  • Operating temperature junction up to 175°C

LSIC1MO170E0750 Applications

Highlights Section

  • Auxiliary power supplies
  • Energy generation and storage
  • Traction
  • Industrial SMPS and drives
  • EV DC-chargers

LSIC1MO170E0750 Resources

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Part NumberPart DescriptionRoHSPb-FreeRoHS (2015/863/EU) CertificateREACH (SVHC's) DeclarationREACH (SVHC's)Halogen FreeIPC-Material Declaration
LSIC1MO170E0750SiC MOSFET 1700V 750mO TO-247-3L

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