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IXSH40N120L2KHV
SiC MOSFET in TO247-4L HV | Series: SIC MOSFETsIndustrial grade, single switch SiC MOSFETs exhibiting good power cycling characteristics and very fast, low-losses switching behavior. These MOSFETs are recommended for use in high-speed industrial switch mode power supplies.
| Property | Value |
|---|---|
VDSS (V) | 1200 |
RDS(ON),max @ 25 °C (Ω) | 80 |
ID, cont @ 25 °C (A) | 40 |
RthJC (K/W) | 0.6 |
TJ Max (°C) | 175 |
- 1200 V with low RDS(on) = 80 mΩ
- SiC MOSFET technology with -3/+15...+18 V gate drive
- Low input capacitance Ciss = 1214 pF
- Maximum virtual junction temperature of Tvj = 175 ⁰C
- Ultra-fast intrinsic body diode with trr = 28.6 ns
- Kelvin source connection
- Low conduction losses
- Low gate drive power requirements
- Low thermal management effort
- Suitable for had-switching
- Optimized gate control
IXSH40N120L2KHV Applications
- Solar inverters
- UPS
- High voltage DC/DC converters
- Switch mode power Supplies
- EV charging infrastructures
- Motor drives
- Induction heating
- Industrial power Supply
IXSH40N120L2KHV Resources
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| Part Number | Part Description | RoHS | Pb-Free | RoHS (2015/863/EU) Certificate | REACH (SVHC's) Declaration | REACH (SVHC's) | Halogen Free | IPC-Material Declaration | |
|---|---|---|---|---|---|---|---|---|---|
| IXSH40N120L2KHV | SiC MOSFET in TO247-4L HV | View More |
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