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IXFN50N120SK
SiCarbide-Discrete MOSFET SOT-227B(mini | Series: SIC MOSFETsIndustrial grade, single switch SiC mosfet built in a 4 connectors, UL certified SOT227B package providing 3000V isolation (1s). Featuring a kelvin connection pin, and exhibiting good power cycling characteristics, and a very fast and low losses switching behaviour, this mosfets is recommend for use in high speed industrial switch mode power supplies and for pulsed power.
| Property | Value |
|---|---|
VDSS (V) | 1200 |
RDS(ON),max @ 25 °C (Ω) | 48 |
ID, cont @ 25 °C (A) | 50 |
RthJC (K/W) | 0.6 |
Package Type | SOT-227B (minibloc) |
TJ Max (°C) | 175 |
IXFN50N120SK Resources
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| Part Number | Part Description | RoHS | Pb-Free | RoHS (2015/863/EU) Certificate | REACH (SVHC's) Declaration | REACH (SVHC's) | Halogen Free | IPC-Material Declaration | |
|---|---|---|---|---|---|---|---|---|---|
| IXFN50N120SK | SiCarbide-Discrete MOSFET SOT-227B(mini | View More |
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