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IXFN50N120SIC
SiCarbide-Discrete MOSFET SOT-227B(mini | Series: SIC MOSFETsIndustrial grade, single switch SiC mosfet built in a 4 connectors, UL certified SOT227B package providing 3000V isolation (1s). Featuring a kelvin connection pin, and exhibiting good power cycling characteristics, and a very fast and low losses switching behaviour, this mosfets is recommend for use in high speed industrial switch mode power supplies and for pulsed power. The switch in the IXFN50N120SIC MOSFET is realized with two 80mΩ chips in parallel for optimized thermal dissipation performance.
| Property | Value |
|---|---|
VDSS (V) | 1200 |
RDS(ON),max @ 25 °C (Ω) | 47 |
ID, cont @ 25 °C (A) | 50 |
RthJC (K/W) | 0.55 |
Package Type | SOT-227B (minibloc) |
TJ Max (°C) | 175 |
IXFN50N120SIC Resources
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| Part Number | Part Description | RoHS | Pb-Free | RoHS (2015/863/EU) Certificate | REACH (SVHC's) Declaration | REACH (SVHC's) | Halogen Free | IPC-Material Declaration | |
|---|---|---|---|---|---|---|---|---|---|
| IXFN50N120SIC | SiCarbide-Discrete MOSFET SOT-227B(mini | View More |
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