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Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry commonly involved when using an N-Channel MOSFET. This enables designers to reduce component count, thereby improving drive circuit simplicity and over-all component cost structure. Furthermore, it allows for the design of a complementary power output stage with a corresponding N-Channel MOSFET, for a power half bridge stage paired with a simple drive circuit.
Advantages:
- Low gate charge resulting in simple drive requirement
- High power density
- Fast switching
- Fast intrinsic diode
- Low Qg and RDSon
- Avalanche rated
- Extended FBSOA
- International standard packages
Trench Gate Parts
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Showing 1 to 12 of 56 Total Results
| -150 | 0.35 | -10 | 36 | 1.5 | Single | TO-263 | 2210 | 120 | 83 | |||||
| -65 | 0.01 | -120 | 185 | 0.42 | Single | TO-263 | 13200 | 53 | 298 | |||||
| -50 | 0.009 | -140 | 200 | 0.42 | Single | TO-263 | 13500 | 53 | 298 | |||||
| -150 | 0.24 | -15 | 48 | 0.83 | Single | TO-263 | 3650 | 116 | 150 | |||||
| -100 | 0.12 | -18 | 39 | 1.5 | Single | TO-263 | 2100 | 62 | 83 | |||||
| -85 | 0.065 | -24 | 41 | 1.5 | Single | TO-263 | 2090 | 40 | 83 | |||||
| -100 | 0.09 | -26 | 52 | 0.83 | Single | TO-263 | 3820 | 70 | 150 | |||||
| -65 | 0.045 | -28 | 46 | 1.5 | Single | TO-263 | 2030 | 31 | 83 | |||||
| -50 | 0.039 | -32 | 46 | 1.5 | Single | TO-263 | 1975 | 26 | 83 | |||||
| -200 | 0.13 | -32 | 185 | 0.42 | Single | TO-263 | 14500 | 190 | 300 | |||||
| -150 | 0.065 | -44 | 175 | 0.42 | Single | TO-263 | 13400 | 140 | 298 | |||||
| -50 | 0.03 | -48 | 53 | 0.83 | Single | TO-263 | 3660 | 30 | 150 |
Trench Gate Applications
- High-side switching
- Load switches
- Low voltage applications
- High-efficiency switching power supplies
- Inverters and battery chargers
