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IXTH120N20X4

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IXTH120N20X4

Discrete MOSFET 120A 200V X4 TO247 | Series: X4 Class
info

The new 200V X4-Class Ultra Junction MOSFETs are available with 120A nominal current rating in TO-247 package. These Power MOSFETs feature significantly reduced channel resistance RDS(on) leading to an improvement in the Figure of Merit FOM RDS(on) x RthJC as compared to its predecessor X3-Class. These benefits enable designers to achieve higher efficiency using simplified thermal design.

PropertyValue
VDSS (V)
200
RDS(ON),max @ 25 °C (Ω)
0.0095
ID, cont @ 25 °C (A)
120
Gate Charge (nC)
108
RthJC (K/W)
0.36
Configuration
Single
Package Type
TO-247
CISS (pF)
6100
trr,typ (ns)
190
PD (W)
417
AEC-Q101 Qualified
No
TJ Max (°C)
175
CRSS (pF)
1.8
  • The lowest on-state resistance in TO-220 RDS(ON) = 9.5mΩ
  • Low thermal resistance RthJC = 0.36 K/W
  • Low gate charge Qg = 108nC
  • 175°C operating junction temperature
  • Low static losses
  • Simplified thermal design
  • Low gate drive power demand

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Part NumberPart DescriptionRoHSPb-FreeRoHS (2015/863/EU) CertificateREACH (SVHC's) DeclarationREACH (SVHC's)Halogen FreeIPC-Material Declaration
IXTH120N20X4Discrete MOSFET 120A 200V X4 TO247

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