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IXFN170N65X2
DiscMSFTNChUltJnctnX2Class SOT-227B(mini | Series: X2 Class
Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness.
In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI).
Advantages:
- Higher efficiency
- High power density
- Easy to mount
- Space savings
| Property | Value |
|---|---|
VDSS (V) | 650 |
RDS(ON),max @ 25 °C (Ω) | 0.013 |
ID, cont @ 25 °C (A) | 170 |
Gate Charge (nC) | 434 |
RthJC (K/W) | 0.107 |
Configuration | Single |
Package Type | SOT-227 |
CISS (pF) | 27000 |
trr,typ (ns) | 270 |
PD (W) | 1170 |
- Ultra low on-resistance RDS(ON) and gate charge Qg
- Fast body diode
- dv/dt ruggedness
- Avalanche rated
- Low package inductance
- International standard packages
IXFN170N65X2 Applications
- Industrial switched-mode and resonantmode power supplies
- Electric vehicle battery chargers
- Ac and dc Motor Drives
- Dc-dc converters
- Renewable-energy inverters
- Power Factor Correction (PFC) circuits
- Robotics and servo control
IXFN170N65X2 Resources
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| Part Number | Part Description | RoHS | Pb-Free | RoHS (2015/863/EU) Certificate | REACH (SVHC's) Declaration | REACH (SVHC's) | Halogen Free | IPC-Material Declaration | |
|---|---|---|---|---|---|---|---|---|---|
| IXFN170N65X2 | DiscMSFTNChUltJnctnX2Class SOT-227B(mini | View More |
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