Link has been copied to clipboardN-Channel Ultra Junction
Ultra junction N-channel MOSFETs boast the lowest on-state resistances of any metal-oxide–semiconductor field effect transistors. The solid state switches also offer increased efficiency, a reduced need for snubber diodes, and lower risks for commutation failures by incorporating fast recovery diodes. Optimized for high-speed and hard switching, applications for ultra junction N-channel MOSFETs include dc–dc converters, electric forklifts, motor drives, onboard battery chargers, power factor correction circuits, and telecommunications equipment.
- Available with with a wide range of drain-to-source voltage ratings of 135 VDSS to 1 kVDSS
- Ultra-low on-state resistance ratings (e.g., 2.5 mΩ to 21 mΩ)
- Available with an extremely wide range of typical drain current (ID25) ratings, from 2 A to 200 A
- Gate charge requirements as low as 7 nC
- High power densities
- Low gate charges ensure higher efficiency while handling lower current loads
- Soft recovery reduces electromagnetic interference
- Suitable for paralleling
- International standard packages with low inductance
N-Channel Ultra Junction Parts
Link has been copied to clipboard
Filters