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IXTA160N04T2
DiscMSFT NChTrenchGate-Gen2 TO-263D2 | Series: Gen2
These devices are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600 Amperes (Tc=@25oC). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. Furthermore, these devices promote device consolidation through the reduction or elimination of multiple paralleled lower current rated MOSFET devices in high power switching applications. The resultant effect is a reduction in part count, as well as the number of required drive components, thus improving upon over-all system simplicity, reliability, and cost.
Advantages:
- Eliminates multiple paralleled lower current rated MOSFET devices
- Provides the ability to control more power within a smaller footprint
- Improves overall system reliability and cost
| Property | Value |
|---|---|
VDSS (V) | 40 |
RDS(ON),max @ 25 °C (Ω) | 0.005 |
ID, cont @ 25 °C (A) | 160 |
Gate Charge (nC) | 79 |
RthJC (K/W) | 0.6 |
Configuration | Single |
Package Type | TO-263 |
CISS (pF) | 4640 |
trr,typ (ns) | 40 |
PD (W) | 250 |
- High current capability (up to 600A)
- Low RDS(ON) and gate charge (Qg)
- Incorporates Littelfuse HiPerFETTM technology for fast power switching performance
- Avalanches capabilities
IXTA160N04T2 Applications
- Switch-Mode and Resonant-Mode Power Supplies
- Dc-dc converters
- Battery Chargers
- Synchronous rectification
- Uninterrupted Power Supplies
- AC motor drives
- Dc choppers
- High Speed Power Switching Applications
IXTA160N04T2 Resources
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| Part Number | Part Description | RoHS | Pb-Free | RoHS (2015/863/EU) Certificate | REACH (SVHC's) Declaration | REACH (SVHC's) | Halogen Free | IPC-Material Declaration | |
|---|---|---|---|---|---|---|---|---|---|
| IXTA160N04T2 | DiscMSFT NChTrenchGate-Gen2 TO-263D2 | View More |
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