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IXFZ520N075T2

Product Status| Activei

IXFZ520N075T2

DiscMSFT NChTrenchGate-Gen2 DE475 | Series: Gen2
info

These devices are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600 Amperes (Tc=@25oC). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. Furthermore, these devices promote device consolidation through the reduction or elimination of multiple paralleled lower current rated MOSFET devices in high power switching applications. The resultant effect is a reduction in part count, as well as the number of required drive components, thus improving upon over-all system simplicity, reliability, and cost.

Advantages:

  • Eliminates multiple paralleled lower current rated MOSFET devices
  • Provides the ability to control more power within a smaller footprint
  • Improves overall system reliability and cost
PropertyValue
VDSS (V)
75
RDS(ON),max @ 25 °C (Ω)
0.0016
ID, cont @ 25 °C (A)
420
Gate Charge (nC)
545
RthJC (K/W)
0.25
Configuration
Single
Package Type
DE475
CISS (pF)
41000
PD (W)
600
trr,max (ns)
150
  • High current capability (up to 600A)
  • Low RDS(ON) and gate charge (Qg)
  • Incorporates Littelfuse HiPerFETTM technology for fast power switching performance
  • Avalanches capabilities

IXFZ520N075T2 Applications

Highlights Section

  • Switch-Mode and Resonant-Mode Power Supplies
  • Dc-dc converters
  • Battery Chargers
  • Synchronous rectification
  • Uninterrupted Power Supplies
  • AC motor drives
  • Dc choppers
  • High Speed Power Switching Applications

IXFZ520N075T2 Resources

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Part NumberPart DescriptionRoHSPb-FreeRoHS (2015/863/EU) CertificateREACH (SVHC's) DeclarationREACH (SVHC's)Halogen FreeIPC-Material Declaration
IXFZ520N075T2DiscMSFT NChTrenchGate-Gen2 DE475

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