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IXFK120N30T
DiscMSFT NChTrenchGate-Gen1 TO-264(3) | Series: Gen1
Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments.
Advantages:
- Easy to Mount
- Space Savings
- High power density
| Property | Value |
|---|---|
VDSS (V) | 300 |
RDS(ON),max @ 25 °C (Ω) | 0.024 |
ID, cont @ 25 °C (A) | 120 |
Gate Charge (nC) | 265 |
RthJC (K/W) | 0.13 |
Configuration | Single |
Package Type | TO-264 |
CISS (pF) | 20000 |
PD (W) | 960 |
- International Standard Packages
- Low RDS(ON)
- Avalanche rated
- High Current Handling Capability
- Fast Intrinsic Rectifier
IXFK120N30T Applications
- Switch-Mode and Resonant-Mode Power Supplies
- Dc-dc converters
- Battery Chargers
- Uninterrupted Power Supplies
- AC motor drives
- Dc choppers
- High Speed Power Switching Applications
IXFK120N30T Resources
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| Part Number | Part Description | RoHS | Pb-Free | RoHS (2015/863/EU) Certificate | REACH (SVHC's) Declaration | REACH (SVHC's) | Halogen Free | IPC-Material Declaration | |
|---|---|---|---|---|---|---|---|---|---|
| IXFK120N30T | DiscMSFT NChTrenchGate-Gen1 TO-264(3) | View More |
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