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N-Channel Trench Gate

N-channel Trench Gate MOSFETs
Trench gate N-channel MOSFETs boast ultra-low on-state resistance and excellent temperature tolerance. These characteristics make them ideal solid state switches in low-voltage, high current systems and harsh environments. Suitably, principal applications for these metal-oxide–semiconductor field effect transistors include light EVs, unmanned aerial vehicles, and onboard battery chargers. Most of the trench gate N-channel MOSFETs made by Littelfuse incorporate HiPerFETTM technology. This addition boosts switching speeds while reducing or eliminating the need for parallel switches.
  • Available with drain-to-source voltage ratings of 40 VDSS to 300 VDSS
  • Extremely low on-state resistance ratings (e.g., 0.85 mΩ, 1.3 mΩ, 3.1 mΩ)
  • Available with a wide range of typical drain currents (ID25) from 32 A and 660 A
  • Operate at temperatures from –40 ℃ to 175 ℃
  • Avalanche rated
  • High power densities
  • Low on-state resistance minimizes power losses
  • Optimized for synchronous rectification in switched mode power conversion applications
  • International standard packages

N-Channel Trench Gate Parts

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