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FDM15-06KC5
| Series: Multi Chip Configurations
These Power MOSFETs based on Super Junction technology feature the lowest RDS(on) in 600V-800V class MOSFETs. Internal DCB isolation simplifies assembly and reduces thermal resistance from junction to heat sink. These devices are Avalanche rated, thereby guaranteeing rugged operation.
Advantages:
- Easy assembly
- Space savings
- High power density
- High reliability
(1) CoolMOS™ is a trademark of Infineon Technologies AG.
| Property | Value |
|---|---|
VDSS (V) | 600 |
RDS(ON),max @ 25 °C (Ω) | 0.165 |
ID, cont @ 25 °C (A) | 15 |
Gate Charge (nC) | 40 |
RthJC (K/W) | 1.1 |
Configuration | Buck |
Package Type | ISOPLUS i4-PAC™ |
CISS (pF) | 2000 |
trr,typ (ns) | 390 |
VISOL,RMS (V) | 2500 |
- Silicon chip on Direct-Copper-Bond substrate
- Fast CoolMOS™(1) power MOSFET 4th generation
- Enhanced total power density
- HiPerDyn™ FRED
FDM15-06KC5 Applications
- Switch mode power supplies
- Uninterruptible power supplies
- Power factor correction (PFC)
FDM15-06KC5 Resources
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| Part Number | Part Description | RoHS | Pb-Free | RoHS (2015/863/EU) Certificate | REACH (SVHC's) Declaration | REACH (SVHC's) | Halogen Free | IPC-Material Declaration | |
|---|---|---|---|---|---|---|---|---|---|
| FDM15-06KC5 | View More |
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