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600V N-Channel Super Junction Power MOSFET Solutions in Buck/Boost/Other Configurations
These Power MOSFETs based on Super Junction technology feature the lowest RDS(on) in 600V-800V class MOSFETs. Internal DCB isolation simplifies assembly and reduces thermal resistance from junction to heat sink. These devices are Avalanche rated, thereby guaranteeing rugged operation.
Advantages:
- Easy assembly
- Space savings
- High power density
- High reliability
(1) CoolMOS™ is a trademark of Infineon Technologies AG.
- Silicon chip on Direct-Copper-Bond substrate
- Fast CoolMOS™(1) power MOSFET 4th generation
- Enhanced total power density
- HiPerDyn™ FRED
Multi Chip Configurations Parts
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Showing 1 to 4 of 4 Total Results
| 600 | 0.165 | 15 | 40 | 1.1 | Buck | ISOPLUS i4-PAC™ | 2000 | 390 | 2500 | UR | ||||
| 600 | 0.045 | 47 | 150 | 0.45 | Buck | i4-Pac | 6800 | 600 | 2500 | UR | ||||
| 600 | 0.07 | 38 | 250 | 0.45 | Boost | i4-Pac | 6800 | 280 | 2500 | UR | ||||
| 600 | 0.045 | 47 | 150 | 0.45 | Boost | i4-Pac | 6800 | 600 | 2500 | UR |
Multi Chip Configurations Applications
- Switch mode power supplies
- Uninterruptible power supplies
- Power factor correction (PFC)
