background-waves

IXKN40N60C

Product Status| Activei

IXKN40N60C

DiscMSFT NChSuprJuncC3-Clas SOT227B/mini | Series: C3 Class
info

These Power MOSFETs based on Super Junction technology feature the lowest RDS(on) in 600V-800V class MOSFETs. Internal DCB isolation simplifies assembly and reduces thermal resistance from junction to heat sink. These devices are Avalanche rated, thereby guaranteeing rugged operation.

Advantages:

  • Easy assembly
  • Space savings
  • High power density


(1) CoolMOS™ is a trademark of Infineon Technologies AG.
PropertyValue
VDSS (V)
600
RDS(ON),max @ 25 °C (Ω)
0.07
ID, cont @ 25 °C (A)
40
Gate Charge (nC)
250
RthJC (K/W)
0.43
Configuration
Single
Package Type
SOT-227B (minibloc)
CISS (pF)
6800
PD (W)
290
trr,max (ns)
650
VISOL,RMS (V)
2500
  • Silicon chip on Direct-Copper-Bond substrate
  • 3rd generation CoolMOS™(1) power MOSFET
  • Enhanced total power density
  • Low thermal resistance

IXKN40N60C Applications

Highlights Section

  • Switch mode power supplies
  • Uninterruptible power supplies
  • Power factor correction (PFC)
  • Welding
  • Inductive heating

IXKN40N60C Resources

Showing 1 to 1 of 1 Total Results
Share
Part NumberPart DescriptionRoHSPb-FreeRoHS (2015/863/EU) CertificateREACH (SVHC's) DeclarationREACH (SVHC's)Halogen FreeIPC-Material Declaration
IXKN40N60CDiscMSFT NChSuprJuncC3-Clas SOT227B/mini

If the product environmental information that you are looking for does not appear in this tab, please complete the Product Environmental Information Request Form.