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IXKC40N60C
| Series: C3 Class
These Power MOSFETs based on Super Junction technology feature the lowest RDS(on) in 600V-800V class MOSFETs. Internal DCB isolation simplifies assembly and reduces thermal resistance from junction to heat sink. These devices are Avalanche rated, thereby guaranteeing rugged operation.
Advantages:
- Easy assembly
- Space savings
- High power density
(1) CoolMOS™ is a trademark of Infineon Technologies AG.
| Property | Value |
|---|---|
VDSS (V) | 600 |
RDS(ON),max @ 25 °C (Ω) | 0.095 |
ID, cont @ 25 °C (A) | 28 |
Gate Charge (nC) | 175 |
RthJC (K/W) | 0.6 |
Configuration | Single |
Package Type | ISOPLUS220™ |
CISS (pF) | 4800 |
trr,typ (ns) | 500 |
PD (W) | 250 |
trr,max (ns) | 800 |
VISOL,RMS (V) | 2500 |
- Silicon chip on Direct-Copper-Bond substrate
- 3rd generation CoolMOS™(1) power MOSFET
- Enhanced total power density
- Low thermal resistance
IXKC40N60C Applications
- Switch mode power supplies
- Uninterruptible power supplies
- Power factor correction (PFC)
- Welding
- Inductive heating
IXKC40N60C Resources
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| Part Number | Part Description | RoHS | Pb-Free | RoHS (2015/863/EU) Certificate | REACH (SVHC's) Declaration | REACH (SVHC's) | Halogen Free | IPC-Material Declaration | |
|---|---|---|---|---|---|---|---|---|---|
| IXKC40N60C | View More |
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