

These Power MOSFETs based on Super Junction technology feature the lowest RDS(on) in 600V-800V class MOSFETs. Internal DCB isolation simplifies assembly and reduces thermal resistance from junction to heat sink. These devices are Avalanche rated, thereby guaranteeing rugged operation.
Advantages:
- Easy assembly
- Space savings
- High power density
(1) CoolMOS™ is a trademark of Infineon Technologies AG.
- Silicon chip on Direct-Copper-Bond substrate
- 3rd generation CoolMOS™(1) power MOSFET
- Enhanced total power density
- Low thermal resistance
C3 Class Parts
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Showing 1 to 6 of 6 Total Results
Part Number | Actions | VDSS (V) | RDS(ON),max @ 25 °C (Ω) | ID, cont @ 25 °C (A) | Gate Charge (nC) | RthJC (K/W) | Configuration | Package Type | CISS (pF) | trr,typ (ns) | PD (W) | trr,max (ns) | VISOL,RMS (V) | Agency Approvals |
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Part Number | Actions | VDSS (V) | RDS(ON),max @ 25 °C (Ω) | ID, cont @ 25 °C (A) | Gate Charge (nC) | RthJC (K/W) | Configuration | Package Type | CISS (pF) | trr,typ (ns) | PD (W) | trr,max (ns) | VISOL,RMS (V) | Agency Approvals | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
800 | 0.15 | 25 | 180 | 0.5 | Single | ISOPLUS220™ | 4600 | 550 | 140 | 2500 | UR | ||||
600 | 0.07 | 47 | 250 | 0.3 | Single | TO-247 | 6800 | 290 | |||||||
600 | 0.036 | 85 | 500 | 0.18 | Single | TO-264 | 13600 | 580 | 694 | ||||||
600 | 0.07 | 40 | 250 | 0.43 | Single | SOT-227B (minibloc) | 6800 | 290 | 650 | 2500 | UR | ||||
600 | 0.036 | 75 | 500 | 0.22 | Single | SOT-227B (minibloc) | 13600 | 580 | 560 | 2500 | UR | ||||
600 | 0.07 | 38 | 250 | 0.45 | Single | ISOPLUS247 | 6800 | 280 | 650 | 2500 | UR |
C3 Class Applications
- Switch mode power supplies
- Uninterruptible power supplies
- Power factor correction (PFC)
- Welding
- Inductive heating