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N-Channel HiPerFETs

N-Channel HiPerFETs
N-channel HiPerFETs (TM) incorporate fast rectifiers into the architecture of a metal-oxide–semiconductor field effect transistors (MOSFETs) to deliver low reverse recovery times (trr > 250 ns). HiPerFETs made by Littelfuse also provide overvoltage protection at turnoff. This eliminates the need for discrete varistors, which simplifies the design of printed circuit boards, increases efficiency, and lowers thermal resistance. Suitable for hard switching and resonant mode operation, applications for N-channel HiPerFETs include dc–dc converters, battery chargers, and temperature and lighting controls.
  • Available with wide ranges of drain-to-source voltage ratings (e.g., 200 V dc to 1 KV dc)
  • Available with wide ranges of drain current ratings (e.g., 10 A to 100 A)
  • Avalanche rated with low total gate charge (Qg) and low intrinsic gate resistance (Rg)
  • Low inductance
  • High power densities
  • Rugged polysilicon gate cell structure
  • Available with a variety of leads and terminals
  • Easy to mount on PCBs with one screw or solder

N-Channel HiPerFETs Parts

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