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CPC3701
N-CH DEPL MODE VERT DMOS FET 60V 1 OHM | Series: N-Channel Depletion-Mode MOSFETs
Our N-channel depletion mode field effect transistors (FET) utilize a proprietary third generation vertical DMOS process. The third generation process realizes world-class, high voltage MOSFET performance in an economical silicon gate process. The vertical DMOS process yields a robust device for high power applications with high input impedance. These highly reliable FET devices have been used extensively in our solid state relays for industrial and telecommunications applications.
| Property | Value |
|---|---|
BVDSX (V) | 60 |
RDS(on) (Ω) | 1 |
VGS(off)_min (V) | -1.4 |
VGS(off)_max (V) | -3.1 |
IDSS_min (mA) | 600 |
IC Package Type | SOT-89 |
- Device Normally On
- High Breakdown Voltage
- Low On-Resistance
- Low VGS (off) Voltage
- Low On-Resistance at Cold Temperatures
- High Input Impedance
- Low Input and Output Leakage
- Small Package Size: SOT-23, SOT-89 & SOT-223
CPC3701 Applications
- Normally On Switches
- Ignition Modules
- Power Supplies
- Telecommunications
- Support for LITELINK Devices
CPC3701 Resources
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| Part Number | Part Description | RoHS | Pb-Free | RoHS (2015/863/EU) Certificate | REACH (SVHC's) Declaration | REACH (SVHC's) | Halogen Free | IPC-Material Declaration | |
|---|---|---|---|---|---|---|---|---|---|
| CPC3701CTR | N-CH DEPL MODE VERT DMOS FET 60V 1 OHM | View More |
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