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N-channel depletion mode field effect transistors (FET)
Depletion Mode MOSFET Devices
Our N-channel depletion mode field effect transistors (FET) utilize a proprietary third generation vertical DMOS process which realizes world-class, high voltage MOSFET performance in an economical silicon gate process. The vertical DMOS process yields a robust device for high power applications with high input impedance. These highly reliable FET devices have been used extensively in our solid-state relays for industrial and telecommunications applications.
- Normally closed with no power applied
- Low VGS(off) voltage
- High input impedance
- Normally closed with no power applied
- Low VGS(off) voltage
- High input impedance
N-Channel Depletion-Mode MOSFETs Parts
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Showing 1 to 12 of 13 Total Results
| 60 | 1 | -1.4 | -3.1 | 600 | SOT-89 | |||
| 250 | 4 | -1.6 | -3.9 | 360 | SOT-89 | |||
| 350 | 14 | -2 | -3.6 | 130 | SOT-89, SOT-223 | |||
| 250 | 10 | -1.6 | -3.9 | 220 | SOT-89 | |||
| 350 | 14 | -1.6 | -3.9 | 240 | SOT-89 | |||
| 350 | 22 | -1.6 | -3.9 | 130 | SOT-89 | |||
| 350 | 35 | -1.6 | -3.9 | 140 | SOT-89 | |||
| 250 | 2.5 | -1.4 | -3.1 | 400 | SOT-223 | |||
| 400 | 6 | -1.4 | -3.1 | 300 | SOT-89, SOT-223 | |||
| 600 | 44 | -1.4 | -3.1 | 100 | SOT-223 | |||
| 800 | 45 | -1.4 | -3.1 | 100 | SOT-223 | |||
| 800 | 45 | -1.4 | -3.1 | 100 | SOT-223-2L |
