Link has been copied to clipboardLow-Power Depletion Mode
N-channel depletion mode field effect transistors (FETs) offer highly reliable solid state relay gate solutions for automotive, industrial, and telecommunications systems. The high-voltage N-channel MOSFETs take advantage of vertical double-diffused metal-oxide–semiconductor (DMOS) architecture to deliver a small footprint. This saves PCB space without sacrificing performance. Typical applications for the devices include ignition modules, power converters, power supplies, and LED driver integrated circuits.
- Normally closed when no power applied
- 350 V drain-to-source voltage
- Low cutoff voltage (VGS(off))
- High input impedance
- Low input and output leakage
- Specifically designed for high-voltage applications
- Ability to perform well in cold environments make devices good choice for automotive ignition modules
- Small size delivers PCB space- and cost-savings
- FET structure prevents thermal runaway and thermally induced secondary breakdown
Low-Power Depletion Mode Parts
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