Link has been copied to clipboard
CPC5603
N-CH DEPL MOSFET 415V 14 OHMS SOT-223 TR | Series: FET for LITELINK™
Our N-channel depletion mode field effect transistors (FET) utilize a proprietary third generation vertical DMOS process. The third generation process realizes world-class, high voltage MOSFET performance in an economical silicon gate process. The vertical DMOS process yields a robust device for high power applications with high input impedance. These highly reliable FET devices have been used extensively in our solid state relays for industrial and telecommunications applications.
| Property | Value |
|---|---|
BVDSX (V) | 415 |
RDS(on) (Ω) | 14 |
VGS(off)_min (V) | -2 |
VGS(off)_max (V) | -3.6 |
IDSS_min (mA) | 130 |
IC Package Type | SOT-223 |
- Device Normally On
- High Breakdown Voltage
- Low On-Resistance
- Low VGS (off) Voltage
- Low On-Resistance at Cold Temperatures
- High Input Impedance
- Low Input and Output Leakage
- Small Package Size: SOT-23, SOT-89 & SOT-223
CPC5603 Applications
- Normally On Switches
- Ignition Modules
- Power Supplies
- Telecommunications
- Support for LITELINK Devices
CPC5603 Resources
Link has been copied to clipboardShowing 1 to 1 of 1 Total Results
Share
| Part Number | Part Description | RoHS | Pb-Free | RoHS (2015/863/EU) Certificate | REACH (SVHC's) Declaration | REACH (SVHC's) | Halogen Free | IPC-Material Declaration | |
|---|---|---|---|---|---|---|---|---|---|
| CPC5603CTR | N-CH DEPL MOSFET 415V 14 OHMS SOT-223 TR | View More |
If the product environmental information that you are looking for does not appear in this tab, please complete the Product Environmental Information Request Form.