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IXYH55N120A4

Product Status| Activei

IXYH55N120A4

Discrete IGBT XPT Gen 4 1200V TO247 | Series: Trench
info

Utilizing XPT™ thin-wafer technology and 4th generation (GenX4™) Trench IGBT process, these up to 1200V devices helps to reduced gate driver requirements and conduction losses. It features reduced thermal resistance, low losses, high current densities and low gate charge requirement. A positive collector-to-emitter voltage temperature coefficient enables designers to use multiple devices in parallel.

Advantages:

  • Ideal for high power density and high inrush currents, low loss applications
  • Hard-switching capable
  • Easy paralleling of devices
  • Reduced gate driver requirements
  • Ease of replacement and availability of isolation package
PropertyValue
VCES (V)
1200
IC @ 25 °C (A)
175
VCE(sat) (V)
1.8
tfi (ns)
270
Configuration
Single
Package Type
TO-247
Status
Active
RthJC [IGBT] (K/W)
0.23
Eoff @ 150 °C (mJ)
8.8
IC @ 110 °C (A)
55
  • Low on-state voltages Vcesat
  • Positive thermal coefficient of Vcesat
  • International standard packages

IXYH55N120A4 Applications

Highlights Section

  • Battery chargers
  • Lamp ballasts
  • Power inverters
  • Uninterruptible power supplies (UPS)
  • Welding machines

IXYH55N120A4 Resources

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Part NumberPart DescriptionRoHSPb-FreeRoHS (2015/863/EU) CertificateREACH (SVHC's) DeclarationREACH (SVHC's)Halogen FreeIPC-Material Declaration
IXYH55N120A4Discrete IGBT XPT Gen 4 1200V TO247

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