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Series: MOS Gated Thyristor
MOS Gated Thyristor
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Designed for high-power pulse and capacitive discharge applications
Switched on by a voltage applied at the gate terminal (MOS structure)
Capable of carrying current up to 32kA for a period of 1 microsecond
High power densities
Low gate drive requirements
Available in proprietary packages: Product Line Introduction (1500V MOS-Gated Thyristors)
surface mountable SMPD and Mini-SMPD
high-voltage versions of the international standard TO-247: TO-247HV and TO-247PLUS-HV
Benefits
High surge current
High current packages
Low Gate Drive Requirements
MOS Gated Thyristor Parts
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