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LGB18N40ATH
D2PAK, IGBT3 | Series: LGB18N40ATH
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil driver applications. Primary use includes Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.
End Products:
- Automotive
| Property | Value |
|---|---|
TYP BVCES@IC (V) | 400 |
ICmax (A) | 18 |
VCE(sat) (V) | 1.8 |
EAS (mJ) | 400 |
PDMAX (W) | 115 |
- Ideal for Coil-on-Plug Applications
- New Design Increase Unclamped Inductive Switching (UIS) Energy per Area
- Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load
- Integrated Gate-Emitter ESD Protection
- Low Threshold Voltage to Interface Power Loads to Logic-Level Microprocessor Devices
- Low Saturation Voltage
- High Pulsed Current Capability
- Optional Gate Resistor and Gate-Emitter Resistor
LGB18N40ATH Applications
- Ignition Systems
LGB18N40ATH Resources
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| Part Number | Part Description | RoHS | Pb-Free | RoHS (2015/863/EU) Certificate | REACH (SVHC's) Declaration | REACH (SVHC's) | Halogen Free | IPC-Material Declaration | |
|---|---|---|---|---|---|---|---|---|---|
| LGB18N40ATH | D2PAK, IGBT3 | View More |
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